| PART |
Description |
Maker |
| HN62408 HN62408FP HN62408P |
524288-WORD X 16-BIT/1048576-WORD X 8-BIT CMOS MASK PROGRAMMABLE ROM 524288字16-BIT/1048576-WORD × 8位CMOS掩膜可编程ROM
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| M5M51008CFP M5M51008CKR-55 M5M51008CKR-55X M5M5100 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静RAM
Octal D-Type Transparent Latches With 3-State Outputs 20-SSOP -40 to 85
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| M5M44405CJ M5M44405CJ-5 M5M44405CJ-5S M5M44405CJ-6 |
EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M5M51008BFP-10VL M5M51008BFP-10VLL M5M51008BFP-12V |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
Mitsubishi Electric Semiconductor
|
| M5M51R16AWG-10L D99015 M5M51R16AWG-15L M5M51R16AWG |
From old datasheet system
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M4V64S40ATP-10L M5M4V64S40ATP-8 M5M4V64S40ATP-8A |
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| HM5118160BJ-8 HM5118160BLJ-8 |
1048576-word x 16-bit Dynamic Random Access Memory
|
Hitachi,Ltd.
|
| M5M4V64S40ATP-8A M5M4V64S40ATP-10 A98009_A M5M4V64 |
From old datasheet system
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
